? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c 650 a v ge = 0 v t j = 125 c 5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 40 a, v ge = 15 v t j = 25 c 2.7 v note 1 t j = 125 c 1.8 v hiperfast tm igbt with diode symbol test conditions maximum ratings v ces t j = 25 c to 150c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c7 5 a i c110 t c = 110 c3 6 a i cm t c = 25 c, 1 ms 300 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 100 a (rbsoa) clamped inductive load @ v ce 600 v p c t c = 25 c 200 w v isol 50/60 hz rms, t = 1m 2500 v t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c weight 5g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s g = gate c = collector e = emitter features ? very high frequency igbt and anti-parallel fred in one package ? square rbsoa ? high current handling capability ? mos gate turn-on for drive simplicity ? fast recovery epitaxial diode (fred) with soft recovery and low i rm applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? dc choppers ? ac motor speed control ? dc servo and robot drives advantages ? space savings (two devices in one package) ? easy to mount with 1 screw ds99163(04/04) v ces = 600 v i c25 = 75 a v ce(sat) = 2.7 v t fi(typ) = 48 ns c2-class high speed igbts preliminary data sheet ixgr 50n60c2 ixgr 50n60c2d1 isoplus247 (ixgr) (isolated tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixgr 50n60c2 ixgr 50n60c2d1 symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs i c = 40 a; v ce = 10 v, 40 51 s note 1 c ies 3700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 290 pf c res 50 pf q g 138 nc q ge i c = 40 a, v ge = 15 v, v ce = 0.5 v ces 25 nc q gc 40 nc t d(on) 18 ns t ri 25 ns t d(off) 115 150 ns t fi 48 ns e off 0.38 0.7 mj t d(on) 18 ns t ri 25 ns e on 1.4 mj t d(off) 170 ns t fi 60 ns e off 0.74 mj r thjc 0.62 k/w r thck 0.15 k/w inductive load, t j = 25 c i c = 40 a, v ge = 15 v v ce = 480 v, r g = r off = 2.0 ? inductive load, t j = 125 c i c = 40 a, v ge = 15 v v ce = 480 v, r g = r off = 2.0 ? reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 60 a, v ge = 0 v, 2.1 v note 1 t j = 150 c 1.4 i rm i f = 60 a, v ge = 0 v, -di f /dt = 100 a/ t j = 100c 8.3 a v r = 100 v t rr i f = 1 a; -di/dt = 200 a/ms; v r = 30 v 35 n s r thjc 0.85 k/w note 1: pulse test, t 300 s, duty cycle 2 % isoplus 247 outline
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 40 80 120 160 200 240 280 320 012345678910 v c e - volts i c - amperes v ge = 15v 13v 5v 7v 9v 11v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 15v 13v 11v 6v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 0.5 1 1.5 2 2.5 3 3.5 4 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 5v 6v 9v fig. 4. dependence of v ce(sat) on temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j - degrees centigrade v c e ( s a t ) - normalized i c = 40a i c = 20a v ge = 15v i c = 80a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 2.4 2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 567891011121314151617 v g e - volts v c e - volts t j = 25oc i c = 80a 40a 20a fig. 6. input adm ittance 0 20 40 60 80 100 120 140 160 180 200 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v g e - volts i c - amperes t j = 125oc 25oc ixgr 50n60c2 ixgr 50n60c2d1
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixgr 50n60c2 ixgr 50n60c2d1 fig. 7. transconductance 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = 25oc 125oc fig. 8. dependence of turn-off en e r g y o n r g 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 2 4 6 8 10 12 14 16 18 r g - ohms e o f f - millijoules i c = 20a t j = 125oc v ge = 15v v ce = 480v i c = 40a i c = 80a fig. 9. dependence of turn-off en e r g y on i c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 20 30 40 50 60 70 80 i c - amperes e o f f - millijoules r g = 2 ? r g = 10 ? - - - - v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy on temperature 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 80a r g = 2 ? r g = 10 ? - - - - v ge = 15v v ce = 480v i c = 40a i c = 20a fig. 11. dependence of turn-off sw itching time on r g 50 100 150 200 250 300 350 400 450 2 4 6 8 10 12 14 16 18 r g - ohms switching time - nanoseconds i c = 20a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 480v i c = 40a i c = 80a fig. 12. dependence of turn-off sw itching tim e on i c 40 60 80 100 120 140 160 180 200 20 30 40 50 60 70 80 i c - amperes switching time - nanoseconds t d(off) t fi - - - - - - r g = 2 ? v ge = 15v v ce = 480v t j = 125oc t j = 25oc
? 2004 ixys all rights reserved ixgr 50n60c2 ixgr 50n60c2d1 fig. 15. gate charge 0 2 4 6 8 10 12 14 16 0 30 60 90 120 150 q g - nanocoulombs v g e - volts v ce = 300v i c = 40a i g = 10ma fig. 16. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - picofarrads c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 20 40 60 80 100 120 140 160 180 200 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds i c = 80a t d(off) t fi - - - - - - r g = 2 ? v ge = 15v v ce = 480v i c = 20a i c = 40a i c = 20a fig. 14. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 200 300 400 500 600 v c e - volts i c - amperes t j = 125 o c r g = 10 ? dv/dt < 10v/ns fig. 16. maximum transient therm al resistance 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixgr 50n60c2 ixgr 50n60c2d1 200 600 1000 0 400 800 80 90 100 110 120 130 140 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 v fr di f /dt v 200 600 1000 0 400 800 0 20 40 60 80 100 1000 0 1000 2000 3000 4000 012 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr a/ s s dsep 2x61-06a z thjc i f =120a i f = 60a i f = 30a t vj = 100c v r = 300v t vj = 100c i f = 60a fig. 20 peak reverse current i rm versus -di f /dt fig. 19 reverse recovery charge q r versus -di f /dt fig. 18 forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f =120a i f = 60a i f = 30a q r i rm fig. 21 dynamic parameters q r , i rm versus t vj fig. 22 recovery time t rr versus -di f /dt fig. 23 peak forward voltage v fr and t fr versus di f /dt i f =120a i f = 60a i f = 30a t fr v fr fig. 24 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.3073 0.0055 2 0.3533 0.0092 3 0.0887 0.0007 4 0.1008 0.0399 t vj = 25c t vj =150c t vj =100c
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